发明名称 |
IMPREGNATED CATHODE MATERIAL |
摘要 |
<p>PURPOSE:To obtain a cathode material uniformly maintaining Sc distribution even performing heat treatment by implanting Sc<+> from above on the cathode material surface coated with a metal thin film. CONSTITUTION:An alloy with Sc is formed by implanting Sc ion into a metal thin film 4 coating the surface of an impregnation type cathode material. For instance, a W substrate 1 having a porous rate 20-25% is impregnated with a Ba-Ca alminate compound 2 followed by being coated with W up to 500nm by means of electron ray evaporation 4 and subjected to implantation of Sc<+>. Since Sc implanted into the W thin film forms a uniform single atomic layer 3 on the surface while the distribution of work function is uniform the properties of a common impregnated cathode can be obtained at a relatively low temperature.</p> |
申请公布号 |
JPS6032231(A) |
申请公布日期 |
1985.02.19 |
申请号 |
JP19830141048 |
申请日期 |
1983.08.03 |
申请人 |
HITACHI SEISAKUSHO KK |
发明人 |
YAMAMOTO YOSHIHIKO;TAGUCHI TADANORI;AIDA TOSHIYUKI;SAKUMICHI KUNIYUKI;GOTOU SUMITAKA;TOKIKUCHI KATSUMI |
分类号 |
H01J9/04;H01J1/14;H01J1/28 |
主分类号 |
H01J9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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