发明名称 |
Method for forming monocrystalline semiconductor film on insulating film |
摘要 |
A monocrystalline semiconductor film is formed on an insulating film first by selectively forming at least one insulating film which has sides substantially perpendicular to <100> or <211>-axes, contiguous to a cubic crystal system monocrystalline semiconductor substrate. An amorphous film of a cubic crystal system semiconductor material is formed to cover an exposed surface of substrate and the insulating film. The amorphous semiconductor film is annealed under a condition such that the amorphous film is grown from the substrate by solid-phase epitaxial growth, thereby converting the amorphous film to a monocrystalline semiconductor film having a crystal lattice continuous to that of the substrate.
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申请公布号 |
US4500388(A) |
申请公布日期 |
1985.02.19 |
申请号 |
US19820445265 |
申请日期 |
1982.11.29 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
OHMURA, YAMICHI;MATSUSHITA, YOSHIAKI |
分类号 |
H01L29/78;H01L21/02;H01L21/20;H01L21/324;H01L21/336;H01L27/12;H01L29/04;H01L29/786;(IPC1-7):C30B1/04 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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