| 摘要 |
PURPOSE:To enhance the responsiveness by laminating and disposing amorphous silicon films in the order of n, i, p, i, n or p, i, n, i, p providing a source electrode or a drain electrode on the outermost layer, and providing a gate electrode at an intermediate layer. CONSTITUTION:After a source electrode 2 is formed on an insulator substrate 1, the fine amount of phosphine-doped silane first n type amorphous silicon film 4n1, a non-doped first i type amorphous silicon film 4i1, diboran gas-doped p type amorphous silicon film 4p, further the similar second i type amorphous silicon film 4i2, and the second n type amorphous silicon film 4n2 are sequentially accumulated thereon to form an amorphous silicon film 4' of 5-layers. Then, parts of the film 4n2 of the uppermost layer and the film 4i1 of the lower layer of the film 4n2 of the film 4' are removed by etching, an insulating film 5 is formed on the film 4', and through holes 7 of the films 4n2 and 4p are formed. Then, an aluminum-deposited film is formed, a drain electrode 6 is formed on the film 4n2, and a gate electrode 3 is formed on the film 4p. |
