| 摘要 |
PURPOSE:To enable to accomplish flattening of the surface of an SiO2 insulating layer in a highly accurate manner by a method wherein quirone-diazide photoresist is used as a plane-forming resin, and an etching is performed on the obtained planeface using ion milling at the incident angle of the prescribed range. CONSTITUTION:After quinone-diazide photoresist has been coated by performing a spin coating on the SiO2 insulating layer 33 having the stepping corresponding to a stepping formed by a lower magnetic pole 34 and a conductive part, it is dried up and a photoresit layer 34 is formed on a substrate. The photoresist layer 34 formed as above has the plane face in the amount of surface irregularity h1 of 0.3mum or below. Then, an etching is performed on the concavity located on the surface of the photoresist layer 34 and the insulating layer 33. Said etching is conducted using an ion beam. The incident angle of an ion beam is to be brought within the range of 60-80 deg. against the perpendicular line on the surface of the photoresit layer 34. |
