发明名称 CHARGE TRANSFER TYPE SOLID STATE IMAGE PICKUP ELEMENT
摘要 PURPOSE:To enable to remove smear component contained in a signal component by providing a vertical CCD register that carries false signal charge near a vertical CCD shift register for signal transfer and taking the difference between the two registers. CONSTITUTION:When light enters to a solid state image pickup element, the light entered under the photodiode generates photocharge 18 in a semiconductor substrate, and the charge is accumulated in junction capacity formed by the photodiode. On the other hand, a shading film etc. is provided on electrodes 8'-1, 8'-2. However, even when light is sheltered, leaking light exists in the area, and photocharge 19 (19-A, 19-B) is generated by leaking light. Charge 19 enters a vertical register 10 for signal transfer and generates smear, and the charge also enters a vertical register 16 adjoining to the register 10. Consequently, the register 10 carries signal charge Q including smear charge S' (total Q+S'), and the register 16 carries smear charge S. By taking the difference between the two signals, a true light signal Q from which only smear component is removed can be obtained.
申请公布号 JPS6032486(A) 申请公布日期 1985.02.19
申请号 JP19830141039 申请日期 1983.08.03
申请人 HITACHI SEISAKUSHO KK 发明人 KOIKE NORIO;NISHIZAWA SHIGEKI;AKIYAMA TOSHIYUKI
分类号 H01L27/148;H04N5/335;H04N5/341;H04N5/359;H04N5/361;H04N5/3725;H04N5/3728;H04N5/378 主分类号 H01L27/148
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