| 摘要 |
PURPOSE:To grown layers by one continuous liquid phase epitaxial growth and to eliminate a current leakage passage by providing slots on a substrate with an insulating film formed with a stripe window as a mask, and sequentially epitaxially growing the first clad layer, an active layer and the second clad layer with the insulating film as a mask. CONSTITUTION:An insulating film 13 is formed on the upper surface 12 of a p type InP substrate 11, a stripe window 14 is opened, the substrate 11 is etched through the window 14, and a slot 15 of substantially Y shape in section is provided. Then, it is inserted into a liquid phase epitaxial growth furnace, thereby sequentially growing a p type InP first clad layer 16, a GaInAsP active layer 17 and an n type InP second clad layer 18. When the both ends of the layer 17 are grown to contact with the substrate 11 and the insulating layer 13 or the layer 13, the layer 18 is reliably isolated from the substrate 11 by the layers 16 and 17. Thereafter, one electrode 19 is covered on the film 13 and the layer 18, and the other electrode is covered on the lower surface 20. |
