| 摘要 |
PURPOSE:To contrive to improve the characteristics of a semiconductor element as well as to provide a higher withstand voltage in a simple structure by a method wherein variation of the volume of electric insulating oil is absorbed by the elastic deformation of a pair of flanges, each having a U-shaped groove. CONSTITUTION:A lower flange 34b is mounted between the lower end of an insulative cylinder 31 and an external electrode 33b on the back surface of a semiconductor element and an upper part flange 34a is mounted between the upper end part of the insulative cylinder 31 and an external electrode 33a on the external surface side of the element. The upper flange 34a and the lower flange 34b are respectively bent between the external electrodes 33a and 33b and the insulative cylinder 31, and hollow parts 33c, which interpenetrate each other in the region surrounding the semiconductor element 30, are formed by the bending parts. Moreover, grooves 34c, whose sections are both almost a U-shape, are respectively formed at the joint parts between the upper and lower part flanges 34a and 34b and the external electrodes 33a and 33b in such a way as to surround the external electrodes 33a and 33b. The upper flange 34a and the lower flange 34b are so designed as to elastically deform when an external force is applied to the flanges 33a and 33b by the U-shaped grooves 34c and the hollow parts 33c. |
