| 发明名称 |
Pressure-applied type semiconductor device |
| 摘要 |
A pressure-applied type semiconductor device, in which a metal stamp for urging a semiconductor body is formed with a peripheral annular groove. When pressure is applied, the groove is elastically deformed. Thus, stress concentration in the semiconductor body directly under the edge of the metal stamp can be alleviated.
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| 申请公布号 |
US4500907(A) |
申请公布日期 |
1985.02.19 |
| 申请号 |
US19820419477 |
申请日期 |
1982.09.17 |
| 申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
TAKIGAMI, KATSUHIKO;TOKUSHUKU, KEIKO |
| 分类号 |
H01L21/58;H01L23/48;H01L23/492;(IPC1-7):H01L21/603;H01L23/04;H01L23/10 |
主分类号 |
H01L21/58 |
| 代理机构 |
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