| 摘要 |
PURPOSE:To form a substrate which has characteristics of both an IG wafer and an epitaxial wafer by forming a high resistance single crystal semiconductor thin layer on a low resistance semiconductor substrate, implanting electrically inert impurity ions, and forming a high resistance single crystal semiconductor thin layer thereon. CONSTITUTION:A P type single crystal silicon thin layer 12 having approx. 1cm of specific resistance and approx. 3mum of thickness is formed on the main surface of a boron-doped P<+> type silicon substrate 11 having approx. 0.01OMEGAcm of specific resistance, oxygen ions are implanted to the layer 12 to form many defects 13. Then, epitaxial grown is performed in an atmosphere of SiC4+H2, a P type single crystal silicon thin layer 14 having approx. 1cm of specific resistance is formed on the surface of the layer 12, it is heat treated in an oxygen atmosphere of approx. 700 deg.C. Thus, a semiconductor substrate which has excellent characteristics of both an intrinsic gettering wafer and an epitaxial wafer can be formed.
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