| 摘要 |
PURPOSE:To dissipate heat from both the upper and lower surfaces of a vessel, and to miniaturize a semiconductor device for power by constituting both surfaces by metallic substrates and each fixing semiconductor element pieces to the substrates. CONSTITUTION:Two power transistor chips 2 are brazed to upper and lower metallic substrates 11, 12 by collector surfaces, and the substrates 11, 12 are connected by a vessel circumferential-wall 7 consisting of an insulator. Emitter electrodes for both chips 2 are connected to an emitter terminal conductor 4 penetrating the wall 7 by conductors 6, and conductors 6 connected to base electrodes are lead out through a penetrating conductor 8 in the wall 7, and connected to a base terminal. Heat generated in the chips is dissipated from both substrates, the same capacitance can be obtained from the two parallel connected chips in half size, and a semiconductor chip can be miniaturized. |
