| 摘要 |
PURPOSE:To judge the extent of the displacement of alignment rapidly and accurately by forming either one of a pattern to be aligned and a pattern for detecting the displacement of alignment to a pattern consisting of segments having the fixed angles of inclination to an X axis and a Y axis and the other to a pattern consisting of segments parallel and vertical to the X axis or the Y axis. CONSTITUTION:A pattern 11 to be aligned is formed to a semiconductor wafer, etc., and patterns 12 for detecting the displacement of alignment are formed to a glass mask used for an alignment exposure process. The pattern 11 to be aligned is constituted by segments parallel with (or rectangular to) an X axis and a Y axis. The patterns 12 for detecting the displacement of alignment are constituted by segments having angles of 45 deg. to the X axis and the Y axis to the pattern 11. When alignment is displaced up to the tolerance r1 of the displacement of alignment, defectives or acceptables are decided easily because the displacement is judged as a contact. |
