| 摘要 |
<p>PURPOSE:To form uniformly photoelectrically conductive films, etc. at the same time, to enable to attain mass production of the films, and moreover to contrive to facilitate formation in a small type and the operation of a thin film forming device by a method wherein fellow cylindrical smaples of the plural number of pieces of the same diameter and to be put in a reaction chamber are connected coaxially. CONSTITUTION:A valve body 6 is descended downward, and a unit formed by connecting auxiliary tubes 3 to cylindrical samples 2 is put on a sample supporter 5. Thereupon the valve body 6 is pushed up by a vertically driving system, the samples 2 are inserted into a reaction chamber 1, and an opening part 4 is closed up tight by the valve body 6. Then the inside of the reaction chamber 1 is exhausted by a high vacuum exhaust system, and SiH4 gas is introduced into the reaction chamber 1 through a gas introducing tube 12. Gas is made as to be mixed at the hollow part of an electrode 10, and to be discharged inside uniformly from fine holes 11. At this time, the surface temperature of the cylindrical samples 2 is risen at about 200 deg.C by a heater 13. Accordingly, amorphous silicon films are formed on the outer peripheries of the cylindrical samples 2 according to glow discharge decomposition of SiH4 gas.</p> |
