| 发明名称 |
SHALLOW-JUNCTION SEMICONDUCTOR DEVICES |
| 摘要 |
A shallow-junction semiconductor device is fabricated by initially implanting a neutral species (non-doping impurity) into a surface region (30, 32) of a semiconductor body (10) prior to the introduction of a dopant therein. This implant serves as a getter for defects and also as a physical barrier. The thermal diffusivity of subsequently introduced dopant species is thereby significantly reduced. As a result, extremely shallow junctions (36, 38) are realized. |
| 申请公布号 |
WO8500694(A1) |
申请公布日期 |
1985.02.14 |
| 申请号 |
WO1984US00851 |
申请日期 |
1984.06.04 |
| 申请人 |
AMERICAN TELEPHONE & TELEGRAPH COMPANY |
发明人 |
KELLY, MICHAEL, JAMES;LEVINSTEIN, HYMAN, JOSEPH;MURARKA, SHYAM, PRASAD;YANEY, DAVID, STANLEY |
| 分类号 |
H01L29/78;H01L21/225;H01L21/265;H01L21/322;H01L29/167;(IPC1-7):H01L21/265;H01L29/32;H01L29/06;H01L21/94 |
主分类号 |
H01L29/78 |
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