| 摘要 |
<p>An oxide semiconductor for thermistor to be used as a sensor mainly in the temperature range of from 200 to 700oC, which contains 65.0 to 98.5 atom % Mn, 0.1 to 5.0 atom % Ni, 0.3 to 5.0 atom % Cr, and 0.05 to 25.0 atom % Zr, with the sum total of these four metallic elements being 100 atom %. This semiconductor has excellent characteristics as temperature sensor in a middle to high temperature region, i.e., it shows changes in resistance with time of only ¨9E5% at 200 to 700oC, thus being most suitable for measuring high temperatures with high reliability.</p> |
