| 摘要 |
PURPOSE:To make the end surface of an opening for fitting an electrode steep by using a laminate of a negative type resist film as a foundation and a positive type resist film as an upper layer as masks when the surface of a semiconductor substrte, to which an element region is formed, is adhered with an SiO2 film and the opening is formed through etching while being made to correspond to the element region. CONSTITUTION:The upper section of a semiconductor substrate 1, to which an element region is shaped through diffusion, is coated with an SiO2 film 2, the whole surface is coated with a negative type resist film 3, and an opening corresponding to the element region is bored through photoetching to expose the film 2 as a film 2'. Since the circumferential wall of the opening takes a tapered shape in a negative type resist at that time, a positive type resist film 4 is formed additionally on the film 3, the film 4 is also attached to the side wall of the opening section through the same treatment, and the opening section is brought to a steep shape. The exposed film 2' is removed through etching, the whole surface is coated with a metallic material 5 for an electrode, and the films 4 and 3 are removed together with the material 5 applied on the films 4 and 3, thus obtaining the electrode 5 having a precise pattern on the element region. |
