发明名称 |
Radiation-sensitive semiconductor device. |
摘要 |
<p>A radiation-sensitive semiconductor device, more in particular a line imager, wherein a plurality of closely spaced photodiodes (10) are electrically insulated from each other by depleted regions.</p><p>The device is provided with storage means (18, 19) for collecting the minority charge generated in each diode during a certain integration time and transfer means (12, 13) for transferring the distinct charge carrier packets to read out means (15), whereby improved performance with respect to blooming between adjacent diodes is obtained.</p> |
申请公布号 |
EP0132870(A1) |
申请公布日期 |
1985.02.13 |
申请号 |
EP19840200928 |
申请日期 |
1984.06.27 |
申请人 |
AGFA-GEVAERT NAAMLOZE VENNOOTSCHAP |
发明人 |
SEVENHANS, JOHANNES MATHILDA;DECLERCK, GILBERT JULES |
分类号 |
G01T1/24;H01L27/148;H01L31/09;(IPC1-7):H01L27/14 |
主分类号 |
G01T1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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