发明名称 MONITORING METHOD FOR ETCHING
摘要 PURPOSE:To detect the completion of etching with high accuracy by magnifying a striped pattern before and after an etching and binary-coding the pattern in the picture signal processing of the surface of a wafer using a TV camera. CONSTITUTION:A grounded upper electrode 2 and a lower electrode 3 connected to a high-frequency power supply 5 are arranged oppositely in an etching treating chamber 1, and a wafer to be etched 4 is placed on the lower electrode 3. Transparent glass 6 is fitted to the ceiling of the treating chamber 1, beams from a light source 13 for projecting beams are projected to the transparent glass through a semi-light transmitting mirror 16, and the contrast of a striped pattern by ion radicals generated in the wafer 4 is magnified by an observation system 10, and observed by using a TV camera 8. Accordingly, the threshold V1 at a level of the recognition-starting of the striped pattern 22 generated in the wafer 4 and a level V2 of an end-point detection are compared with each other, and the completion of etching is decided when these values are kept within the predetermined values.
申请公布号 JPS6028234(A) 申请公布日期 1985.02.13
申请号 JP19830135829 申请日期 1983.07.27
申请人 HITACHI SEISAKUSHO KK 发明人 FUJII TERU;KAMIMURA TAKASHI;OOTSUBO TOORU;NOGUCHI MINORU;AIUCHI SUSUMU
分类号 H01L21/302;H01L21/3065;(IPC1-7):H01L21/302 主分类号 H01L21/302
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