| 摘要 |
PURPOSE:To prevent contamination to be generated at processing time when a though-hole, etc., are to be formed by dry etching on a material to be processed by a method wherein a selective pattern thereof is formed with a nonconductive thin film. CONSTITUTION:For formation of a through-hole by processing an SiO2 film 2 on an Si substrate 1, a resist pattern 3 of the prescribed shape is formed on the SiO2 film 2 at first. Then SiO2 films 4, 5 are formed using E-B evaporation. Then by removing the resist pattern 3 and the SiO2 film 5 on the resist pattern, a selective pattern is formed. Finally, dry etching is performed using the SiO2 film 4 as a mask, and the through-hole 7 of the prescribed shape is formed in the SiO2 film 2. Accordingly because the material having no fear of contamination is used for the nonconductive thin film to be used for the mask, contamination of the device can be prevented. |
