| 摘要 |
PURPOSE:To prevent evaporation of a P from the surface of a semiconductor crystal when a P4S7 film is to be formed on the InP semiconductor crystal by a method wherein formation thereof is performed in an atmosphere containing P. CONSTITUTION:After a semiconductor crystal 12 consisting of an InP crystal is set in a reaction tube 10, the surface of the crystal 12 is cleaned supplying HCl+H2 gas from a gas source 4. Then after the inside of the reaction tube 10 is replaced with PH3+H2 gas supplied from a gas source 3, the crystal 12 is heated by a heat source 11. At this time, evaporation of P from the surface of the crystal 12 is suppressed by existence of PH3 gas. Then, after supply of gas from the gas source 3 is cut, SCl2 gas and H3PS4 gas are supplied respectively from a gas source 1 and a gas source 2. Accordingly a vapor phase reaction of gases mentioned above is performed in the reaction tube 10, and as a result, an insulating film consisting of P4S7 is formed on the semiconductor crystal 12. |
