| 摘要 |
PURPOSE:To prevent the dissolution of an electrode section by moisture, and to improve the moisture vapor resistance of a device by previously making the film thickness of the electrode section thicker than that of a metal for a wiring when a PSG layer is applied on a semiconductor substrate through an insulating layer and forming an external leading-out electrode on the PSG layer. CONSTITUTION:A thick filed SiO2 film 2 is formed to the peripheral section of a semiconductor substrate 1, source and drain regions 9 are diffused and shaped to the substrate 1 surrounded by the film 2, and a polycrystalline Si gate electrode 8 is formed on the substrate 1 through a gate oxide film 7 while being positioned between these regions. The whole surface is coated with a PSG film 3 and a bonding pad 12 is formed positioned on the film 2, and opening are bored made correspond to the regions 9. Al leading-out electrodes 14 being in contact with the pad 12 and the regions 9 are applied extended on the film 3, but the thickness of the electrodes 14 positioned on the regions 9 is previously made sufficiently thicker than that of the electrode wiring 14 connecting to the electrodes at that time. The whole surface is coated with a cover film 5 through a vapor phase growth method. |
