Semiconductor device comprising a field effect transistor.

摘要

@ A semiconductor device comprising a field effect transistor of the D-MOS type which is composed of sub-structures and in which further surface zones (20) are provided in the intermediate spaced between the regularly arranged sub- structures in order to improve the field distribution in the semiconductor body, as a result of which the break-down voltage of the transistor is increased. The further surface zones can be provided without additional processing steps being required during the manufacture and need not be contacted at the main surface.