| 摘要 |
PURPOSE:To shorten a manufacturing process for a semiconductor device by implanting ions to a semiconductor, coating the surface of the semiconductor with a metallic film, which does not react chemically with the semiconductor at a temperature lower than the annealing temperature of an ion implanted region, activating implanted ions while using the metallic film as a cap material and leaving a part of the metallic film as an electrode and removing others. CONSTITUTION:Si ions are implanted to a semic-insulating GaAs substrate 11, and an ion implanted region 21 as an operating layer is formed to a surface layer. The whole surface is coated with a Schottky barrier gate electrode metal 41 consisting of TiW, etc., which do not react with GaAs in a post annealing process, and the region 21 is changed into an activated region 22 through heat treatment in H2 gas at 800 deg.C while using the metal 41 as a cap material. The metal 41 is left as a gate electrode 411 and others are removed through dry etching employing SF6 gas, and a source electrode 511 and a drain electrode 512 consisting of an AuGe alloy extending over the substrate 11 from the end sections of the region 22 are applied on both sides of the electrode 411. |
