| 摘要 |
PURPOSE:To obtain a compact uniform thin-film, an internal strain thereof is small, by controlling and ionizing a part of a reaction gas by simultaneously using vacuum ultraviolet beams, a wavelength thereof is shorter than that of ultraviolet beams, in an optical vapor growth method through which neutral radicals are excited and a vapor phase reaction is generated by projecting ultraviolet rays to the reaction gas. CONSTITUTION:An anode plate 103 is mounted to the ceiling of a vacuum vessel, a metallic pedestal 104, the back thereof has an infrared heater 107, is disposed to a bottom opposite to the plate 103, and a base body 105 is placed on the pedestal. A low pressure mercury lamp 101 generating UV beams for exciting a reaction gas to neutral radicals and an Ar discharge tube 102 generating VUV beams for controlling and ionizing one part of the reaction gas are fitted on both sides of the plate 103 while holding the plate 103. According to such constitution, a valve 106 is closed and the base body 105 is heated at a set temperature by a heater 107, and the inside of the vessel is evacuated sufficiently. The valve 106 is opened and a mixed gas of SiH4 and NH3 is introduced, and an electrostatic substance is given between the plate 103 and the base body 105 while projecting UV beams and VUV beams. |
