发明名称 SOLID-STATE DEVICE
摘要 The device comprises a MOS sensor for a photosensor part, a CTD shift register for a read-out circuit, two transfer gates which are connected between vertical signal output lines and the CTD, and a reset gate which is connected between a juncture of the two transfer gates and a reset voltage line. A method is adopted in which signal outputs of a number of rows are transfered to the CTD in a horizontal blanking period, and signals of a number of rows are simultaneously read out in a horizontal scanning period.
申请公布号 KR850000036(B1) 申请公布日期 1985.02.13
申请号 KR19800004102 申请日期 1980.10.27
申请人 HITACHI LTD. 发明人 OOBA, SINYA;OJAKI, TOSIHUMI;NAKAI, MASAKI;HANAMURA, SYOSHI;KUBO, MASAHARU;TAKAHASI, KENJI
分类号 H01L27/14;(IPC1-7):H01L27/14 主分类号 H01L27/14
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