| 摘要 |
<p>PURPOSE:To reduce the number of patterns as well as to contrive improvement in manufacturing accuracy by a method wherein a semiconductor layer is self- matchingly formed at the overlapping part of two patterns. CONSTITUTION:The first electrode layer 14 and a semiconductor layer 15 are patternized by the first pattern 11. Subsequently, an interlayer insulating film 17 is formed in such a manner that layers 14, 15 and 16 are covered by the film 16 without removing a resist film 16. Then, the film 16 is removed and, at the same time, the film 17 located above the film 16 is also removed, and a contact hole is formed in a self-matching manner. Subsequently, the layer 15 is patternized by the second pattern 12 and it is turned to a semiconductor 18. Subsequently, the second electrode layer 19 is formed on the layer 14 and the layer 18, and the layer 19 is patternized by the third pattern 13. In this case, the layer 15 is self-matchingly formed at the overlapped part of the pattern 11 and 12. As a result, the matching accuracy between patterns is relaxed, and the same type of element can be formed accurately even when it is slightly deviated, thereby enabling to reduce the number of patterning and to improve the manufacturing accuracy.</p> |
