| 摘要 |
PURPOSE:To obtain a semiconductor device having high dielectric resistance by constituting an inter-layer insulating film by double layer structure of a phosphorus silicate glass film and an insulating film consisting of a Si compound grown through a plasma vapor phase chemical reaction method and positioning the glass film at an upper section when the inter-layer insulating film is formed between multilayer interconnections. CONSTITUTION:N type regions 15 and 16 are diffused and formed alternately on the surface layer section of a P<-> type semiconductor substrate 1 while being brought into contact mutually, the whole surface is coated with a gate insulating film 2, and a gate 3 for storage surrounded by a SiO2 film 4 while being made to correspond to the region 15 and a transfer gate 5 corresponding to the region 16 are formed on the insulating film 2. The whole surface is coated with a PSG film 6, a first Al electrode 7 having a predetermined shape is formed on the film 6, and a second Al electrode 10 is formed on the electrode 7 through inter-layer insulating films 8 and 9 and coated with a protective film 11. In the constitution, the film 8 positioned on the lower side is constituted by a P-SiN4 film through a plasma vapor phase chemical reaction method, and the film 9 on the upper side is constituted by a PSG film. Accordingly, the growth of an aluminum hillock is inhibited, and cracks, etc. are not generated. |
