MANUFACTURE OF OXIDE MAGNETIC THIN FILM

摘要

PURPOSE:To facilitate the use of the maximum power of a source for sputtering and simplify the process and improve the film formation efficiency by utilizing effectively a preparatory sputtering under the pressure not higher than a normal partial pressure of oxygen with which an oxide film can be removed. CONSTITUTION:Iron or alloy whose main component is iron is used for a target and an Fe3O4 film is formed on a substrate maintained at 150-300 deg.C by sputtering in an atmosphere of oxygen-vapor. Then the film is subjected to low temperature oxidization in the atmosphere and an oxide magnetic thin film composed of gamma-Fe2O3 is obtained. In this composition, vapor is introduced onto the target surface while a partial pressure of oxygen with which an oxide film can be removed is maintained and reactive sputtering is performed under this condition. With this constitution, a margin of vapor is very wide and workability is not influenced by the introduction of this method and the maximum power can be used from the beginning of the sputtering.