发明名称 |
Programmable cell for use in programmable electronic arrays |
摘要 |
An improved programmable cell for use in programmable electronic arrays such as PROM devices, logic arrays, gate arrays and die interconnect arrays. The cells have a highly non-conductive state settable and non-resettable into a highly conductive state. The cells have a resistance of 10,000 ohms or more in the non-conductive state which are settable into the conductive state by a threshold voltage of 10 volts or less, a current of 25 milliamps or less, for 100 microseconds or less. The cells in the conductive state have a resistance of 100 ohms or less. The cells have a maximum permittable processing temperature of 400 DEG centigrade or more and a storage temperature of 175 DEG centigrade or more. The cells are formed from doped silicon alloys including at least hydrogen and/or fluorine and contain from about 0.1 to 5 percent dopant. The cells can be plasma deposited from silane or silicon tetrafluoride and hydrogen with 20 to 150,000 ppm of dopant. Each cell in an array is a thin film deposited cell and includes an isolating device which can be a bipolar or MOS device or can be a thin film diode or transistor. The associated addressing circuitry also can be conventional bipolar or MOS devices or thin film deposited devices. The cells have a cell area of less than one square mil to provide a high cell packing density.
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申请公布号 |
US4499557(A) |
申请公布日期 |
1985.02.12 |
申请号 |
US19810281018 |
申请日期 |
1981.07.06 |
申请人 |
ENERGY CONVERSION DEVICES, INC. |
发明人 |
HOLMBERG, SCOTT H.;FLASCK, RICHARD A. |
分类号 |
G11C17/00;H01L21/8229;H01L21/8246;H01L27/10;H01L27/102;H01L27/105;H01L27/112;H01L27/24;H01L29/68;H01L29/861;H01L45/00;(IPC1-7):G11C13/00 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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