| 摘要 |
<p>PURPOSE:To obtain an AlGaAs single crystal having improved optical and electrical characteristics with high reproducibility, by controlling the temperature of a GaAs substrate and the molecular beam intensity ratio of Al and Ga to Al on the basis of a high-speed electronic ray diffraction pattern in growing the crystal. CONSTITUTION:A GaAs substrate 1 is set in a vacuum vessel 12, and the interior of the vacuum vessel 12 is evacuated. The sustrate 1 is heated at the same time to emit molecular beams of Al, Ga and As and if necessary molecular beams of an impurity, e.g. Be or Si, from molecular beam evaporation sources 5-9 to form an AlGaAs layer on the substrate 1. Electron rays are then applied from an electronic gun for electron ray diffraction to the surface of the substrate 1, and the reflected light therefrom is made to reach a screen 11. The resultant high- speed electronic ray diffraction pattern is observed. If the diffraction pattern is of one- - two-fold period structure, the substrate temperature is increased a little, and if necessary the moelcular beam intensity ratio is reduced to transfer the diffraction pattern to the three-fold period structure. Thus, the crystal is grown under the conditions.</p> |
