| 摘要 |
PURPOSE:To produce a high-quality single crystal in high yield, by using a resistance heater composed of a plate resistance heater and a cylindrical resistance heater, wherein the ratio of the minimum inner diameter of the former heater to the inner diameter of the bonded part of the former heater and the latter heater falls within a specific range. CONSTITUTION:The resistance heater for the production of single crystal is composed of (A) a cylindrical resistance heater 11 having vertical resistance heater elements, (B) a plate resistance heater 12 composed of resistance heater elements aranged radially along the bottom of a crucible, having a hole at the center and integrated perpendicularly to the cylindrical resistance heater 11, and (C) electrode connectors 13 connected straightly to the lower ends of the cylindrical resistance heater. The inner diameter RB of the plate resistance heater 12 is made to be 20-80% of the inner diameter RW of the bonded part of the cylindrical resistance heater 11 and the plate resistance heater 12. The optimum temperature distribution along the radial direction of the crucible can be attained, and a single crystal having low dislocation density can be produced by this process. |
