发明名称 DRIVING CIRCUIT OF FIELD EFFECT TRANSISTOR
摘要 PURPOSE:To improve switching speed at the OFF of an FET by providing a switching element between gate sources of the FET and also connecting the control terminal of the switching element to a node between one end of the secondary side of a transformer drivng the FET and a diode. CONSTITUTION:When a pulse from a control circuit CONT is turned off, flyback voltage generating negative potential on the output terminal 1 of the transformer T1 by energy accumulated in the transformer T1 is generated. during the period generating said flyback voltage, a transistor (TR) 1 is separated from the transformer T1 because a diode X1 is reversely biased. Since current is supplied to a TR2 through a resistor R1 by the flyback voltage of the transformer T1, the TR2 is turned on. When the TR2 is turned on, the gate and source of the FET TR1 is shortcircuited so that charge accumulated between the gate and source of the FET TR1 is instantaneously discharged and the FET TR1 is instantaneously turned off.
申请公布号 JPS6027224(A) 申请公布日期 1985.02.12
申请号 JP19830135014 申请日期 1983.07.22
申请人 NIPPON DENKI KK 发明人 MINAMIMURA KAZUYOSHI
分类号 H03K17/04;H03K17/0412;H03K17/567;H03K17/687 主分类号 H03K17/04
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