| 发明名称 |
Low reflectivity electrodes in semiconductive SAW devices |
| 摘要 |
Low reflectivity electrodes (2-4) are formed within recesses extending from a major surface of a semiconductive and piezoelectric substrate (1) (such as gallium arsenide) so as to reduce SAW reflectivity from the electrodes.
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| 申请公布号 |
US4499440(A) |
申请公布日期 |
1985.02.12 |
| 申请号 |
US19830525204 |
申请日期 |
1983.08.22 |
| 申请人 |
UNITED TECHNOLOGIES CORPORATION |
发明人 |
GRUDKOWSKI, THOMAS W. |
| 分类号 |
H03H9/02;H03H9/145;(IPC1-7):H03H9/13;H03H9/25;H03H9/42 |
主分类号 |
H03H9/02 |
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