| 摘要 |
PURPOSE:To devise the improvement of film quality by recrystallizing an amorphous or a polycrystalline GaAs layer formed on an insulation substrate after melted by heating due to energy ray irradiation under an atmosphere of As to improve the crystallization. CONSTITUTION:A GaAs film 2 is irradiated with energy rays. At the time of irradiation, a heater 9 is controlled to make the temperature of As 7 equal to the melting point of GaAs. While the GaAs is melted, the As is evaporated in the atmosphere. Since the pressure of the As atmosphere is equal to the pressure of the saturated vapor of As when the GaAs is melted, the crystalline granule of the GaAs grows to a greater crystalline granule or a single crystal without destroying chemical equivalence. |
