| 摘要 |
<p>MAGNETICALLY SENSITIVE TRANSISTORS UTILIZING LORENTZ FIELD POTENTIAL MODULATION OF CARRIER INJECTION Magnetically sensitive transistors utilizing a newly discovered transduction mechanism are described. The transduction mechanism is Lorentz field potential modulation of carrier injection at the emitter-base junction. Either avalanching or non-avalanching collectors are utilized in a structure having a single emitter and at least one but preferably two collectors. The emitter-base junction is forward biased to inject carriers and the collector-base junctions are reverse biased to collect carriers. Carrier injection is modulated by a Lorentz field. The Lorentz field is produced across the injecting surface of the emitter by interaction between the moving injected carriers by intersection with a magnetic field according to the Lorentz principle. The Lorentz field biases a portion of the emissive surface to inject more heavily and biases the remaining portion to inject less heavily. The carriers streaming toward the separate collectors are thus more heavily concentrated for one collector than the other. For maximum sensitivity, it is important to configure the positions and dimensions of the emitter and collector or collectors such that the maximum Lorentz potential, and hence the maximum biasing modulation, is applied to the predominant injection area of the emitter. Since the maximum Lorentz potential can be developed across the longest physical dimension of the emitter, the preferred arrangement of emitter and collector is with the collector located to one side or the other (or both sides where two collectors are employed) of an imaginary plane bisecting the maximum Lorentz contour. The Lorentz potential can be developed on one geometrical axis and electrically coupled to a primary injection area elsewhere or on another axis for maximum effect.</p> |
