| 摘要 |
PURPOSE:To obtain a super-miniature strain gage, whose performance is stable, by utilizing the change in characteristics of an MOSFET caused when stress is applied to the gate or the gate oxide film of the MOSFET. CONSTITUTION:The characteristics of an MOSFET are changed when stress is applied to the gate or the gate oxide film of the MOSFET. The applied stress is detected by said change. Namely, by using the pressure sensitive characteristic of an MOS load resistor yielded by the diode connection between the gate G and the drain D of the MOSFET, a strain gage is formed by combining said device and a pressure receiving diaphragm. Thus the super-miniature strain gage, whose performance is stable can be obtained. |
