发明名称 |
Method for manufacturing three-dimensional semiconductor device by sequential beam epitaxy |
摘要 |
A method for manufacturing a three-dimensional semiconductor device which is capable of preventing the stepwise disconnection of an interconnection layer and performing a high integration thereby and which comprises the steps of: forming a polycrystalline or amorphous semiconductor layer on an insulating film having an opening at a predetermined position of a first element covered on a single-crystalline semiconductor substrate having the first element; irradiating an energy beam to said semiconductor layer to grow a single crystal in a predetermined region in said semiconductor layer using as a seed crystal that part of the semiconductor substrate which contacts with semiconductor layer; and forming a second element on the grown single-crystalline semiconductor region and forming an interconnection between the first and second elements by using a part of the single-crystalline semiconductor region from said semiconductor substrate to said second element.
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申请公布号 |
US4498226(A) |
申请公布日期 |
1985.02.12 |
申请号 |
US19820412241 |
申请日期 |
1982.08.27 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
INOUE, TOMOYASU;SHIBATA, KENJI |
分类号 |
H01L21/20;H01L21/74;H01L21/822;H01L23/528;H01L27/06;H01L29/786;(IPC1-7):H01L21/263;H01L21/225 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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