| 摘要 |
PURPOSE:To enable to remove completely a deposit on the inside wall of a reaction vessel without removing the reaction vessel by a method wherein a heating element transferable or removable, and moreover put close to the inside wall of the reaction vessel, and different from a substrate installing base is provided in the reaction vessel. CONSTITUTION:A substrate installing base 5 manufactured of carbon is put in a reaction vessel 1 manufactured of quartz, and a substrate crystal 6 is put thereon. TMGa, TMAl and AsH3 are sent from a raw material gas introducing port 3 together with carrier gas, the substrate is heated by a high-frequency coil 7, and GaAs or GaAlAs is deposited on the substrate according to a thermal decomposition reaction. To remove a deposit, after the substrate is taken out from a substrate removal port 2, a heating element 8 for heating of the reaction tube is put in a region placed with the substrate installing base, and etching gas, hydrogen chloride gas for example, is flowed in the reaction tube heating the heating element thereof by the high-frequency coil 7 the same with the coil used to heat the substrate. The heating element for heating of the reaction tube is a cylinder, and because the outer circumference thereof is positioning in the neighborhood of the inside wall of the reaction tube, the inside wall of the reaction tube is heated sufficiently, and the deposit can be removed easily according to the vapor phase etching reaction. |
