| 摘要 |
PURPOSE:To contrive to shorten the pressure regulation waiting period, and to enhance the throughput of a semiconductor manufacturing device by a method wherein pressure in a vacuum chamber is regulated not depending upon opening and closing action of a variable conductance valve. CONSTITUTION:A vacuum chamber 1 is connected to a high vacuum exhaust device 2 of exhaust means through a valve 3. Moreover, a gas control unit 4 of gas supply means is connected to the vacuum chamber 1 through a valve 5. After the vacuum chamber 1 is exhausted to a high vacuum according to the high vacuum exhaust device 2 through the valve 3, gas is supplied thereto by opening the valve 5 continuing high vacuum exhaustion steadily as it is. When the mass flow rate of supplying gas is held at a constant according to the gas control unit 4, pressure in the vacuum chamber 1 being exhausted at a fixed exhaust speed is stabilized reaching some fixed balancing pressure. Accordingly, to obtain the desired pressure according to the treatment process of a wafer, it is favorable to regulate the flow rate of gas supplied by the gas control unit 4 by supervising pressure of the vacuum chamber 1 according to a pressure gauge 9. |
