| 摘要 |
PURPOSE:To reduce deterioration of the characteristic of a forming amorphous film according to impurities, and to reduce extremely the contamination and doping of a solar cell from adherends by a method wherein substrate holders are arranged by hanging respectively the bent parts thereof to linear type discharge electrodes, and plasma is generated by applying a high-frequency voltage between the discharge electrodes. CONSTITUTION:Substrates 5 are equipped on substrate holders 4, the holders thereof are hanged to exposing electrodes 6 connected to a high-frequency electric power source E, and put in a core tube 2. After the core tube 2 is exhausted to a vacuum, monosilane of 50cc/min and diborane of 100cc/min are flowed to make pressure to 1Torr, and a high-frequency voltage is applied between the electrode lead wires 8. Accordingly, plasma is generated between the electrodes 4 using both as the substrate holders to form P type amorphous Si layers at 20mm. thickness. Monosilane only is flowed in succession to form an I type layer at 500mm. thickness, monosilane and phosphine of 100cc/ min are flowed finally to form an N type layer at 10mm. thickness, and taken out from a reaction oven. After then, an ITO (indium tin oxide) is evaporated at 100mm. thickness on the surface of the N type layer as a transparently conductive film to manufacture P-I-N structural solar cells. |
