| 摘要 |
PURPOSE:To enable to display an effect for three dimensional formation of an LSI by a method wherein a seed crystal region is formed on an amorphous insulator to control crystallographic orientation, and a single crystal silicon film having large grain size is formed holding crystallographic orientation of a seed crystal. CONSTITUTION:A polycrystalline silicon film 2 is deposited on a quartz glass 1 according to the vapor phase growth method, and an SiO2 film of insulator film is deposited according to the vapor phase growth method. Stripe type parallel grooves 4 are formed on the surface of the SiO2 film 3 thereof. A polycrystalline silicon film is deposited according to the vacuum chemical vapor phase growth method wholly on the surface of the SiO2 film 3 worked to form the grooves. Only the unnecessary polycrystalline silicon films on groove isolation regions are abraded to be removed according to chemical-mechanical polishing technique. To perform crystallographically orientational control by laser annealing of the vacuum chemical vapor phase growth polycrystalline silicon film 5 buried in the grooves, seed crystal regions orientated preferentially are formed at the parts of the grooves, and then grains are grown holding crystallographic orientation. |
