发明名称 LIQUID PHASE EPITAXIAL GROWTH DEVICE
摘要 PURPOSE:To remove crack loss of a wafer fixed to the lowest position of a wafer holder, and to enhance manufacturing yield of formation of epitaxial films by a method wherein a tubular body having length larger than the fixing pitch of wafers is provided at the inserting port of the wafer holder protruding toward the outer direction from a duct. CONSTITUTION:A tubular body 10 equipped nearly coaxially with a core tube 1 is a cylindrical shape, the diameter thereof is made to size as to enable a holder 8 to pass through freely, and length (height) is made to the degree of 3 pitches of wafers 9 fixed to the holder 8. While, a heat reflector assembly is constructed of heat reflectors 6 of the plural number of sheets, pillars 11 of the plural number of pieces and fitments 12 of the plural number of pieces. The wafers 9 adhered with epitaxial films are pulled up outside of a furnace crossing duct 5. At the lowest wafer 9 pulled up to the tubular body 10, the gas current B of a high temperature blows against the undersurface, while on the other hand, an air current D warmed by mixing of the gas current B comes in contact with the topsurface. At the lowest wafer 9 going to be pulled up outside from the tubular body 10, the gas current B cooled by the air current D comes in contact with the undersurface, while on the other hand, the air current D of the room temperature blows against the topsurface.
申请公布号 JPS6025229(A) 申请公布日期 1985.02.08
申请号 JP19830133751 申请日期 1983.07.22
申请人 FUJITSU KK 发明人 SAKATA TOSHIO;SHIMIZU NOBUTAKA
分类号 H01F41/28;H01L21/208 主分类号 H01F41/28
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