| 摘要 |
PURPOSE:To enable to perform positioning exposure of a conductor pattern easily and moreover with favorable precision at magnetic material pattern formation time by a method wherein after a resin film on a positioning pattern part is covered with a resist film, etching is performed. CONSTITUTION:An Al2O3 layer is formed as a first insulating layer 2 on a substrate 1, and a Ta/Au film is evaporated as a conductor pattern 3. Then, a resist pattern is formed, and the Ta/Au film is processed according to ion milling using the resist pattern thereof as a mask to form conductor patterns 3. An SiO2 layer is sputtered as a second insulating layer 4, moreover a polyimide resin film 5 is rotatingly applied, and baking is performed in the air. After then, a resist is rotatingly applied, and moreover exposure and development are performed to form a resist pattern 7 as to protect the peripheral part of the positioning pattern. Etching is performed according to an argon ion beam rotating a sample base to remove the polyimide resin film 5, and smoothing of the surface having the level differences is realized. After etching is performed, the resist pattern 7 of resist layer remaining on the positioning mark part and the polyimide resin film positioning thereunder are incinerated to be removed according to plasma ashing. |
