| 摘要 |
PURPOSE:To eliminate the limit of high integration by means of the countermeasures for preventing the soft errors at the part, by constituting the circuit in which the bit line by the radioactive particle such as alpha rays, etc., and the soft error at the sense amplifier can be hardly increased. CONSTITUTION:The information in a memory cell 20 is amplified by an invertor 21 connected to respective bit lines 19, and read out by a sense amplifier 22. For the information, in which the above-mentioned actuation is repeated one more time to read, only 1 bit is selected in accordance with the address information respectively and is stored to an information storing means 14 temporarily. For a comparing means 15, both pieces of information are compared. When they are the same, a write-in and read-out control means 16 outputs the second information. When they are different, the means 16 outputs the information different from the information obtained when the bit line electric potential becomes 0V at the time of the read-out. Since the information is amplified by the invertor 21, the panel point capacity of the sense amplifier part is increased, and further, the soft error which occurs on the bit line, is surely caused in the direction setting the bit line electric potential to 0V, and in the second continuous actuation, the soft error hardly occurs both two times. |
