发明名称 |
THIN FILM HETERO JUNCTION PHOTO-CELLS |
摘要 |
A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at least tellurium and then heating said film at a temperature between about 250 DEG C and 500 DEG C for a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention. |
申请公布号 |
AU542149(B2) |
申请公布日期 |
1985.02.07 |
申请号 |
AU19830012543 |
申请日期 |
1983.03.17 |
申请人 |
MONOSOLAR INC. |
发明人 |
BULENT M. BASOL;ERIC S-F. TSENG;ROBERT L. ROD |
分类号 |
H01L31/04;H01L21/368;H01L31/0224;H01L31/0392;H01L31/073;H01L31/18 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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