| 摘要 |
PURPOSE:To supply the construction method of a babble memory device which can omit the formation of the 3rd insulation layer, by forming the etchant of the 2nd insulation layer on which the 1st insulation layer covered on the magnetic garnet film works as a spacer, by using the high etching resistant material. CONSTITUTION:The 1st insulation layer 2 is covered ranging to its whole surface on the magnetic garnet thin layer 1. When the silicides such as PLOS, nitride silicone (Si344), silicon oxide (SiO) or SiO2, etc., as the 2nd insulation layer which insulates and covers the electric conductor pattern 3, the nonsilicides such as alumina (alphaAl2O3), etc., as the material of the 1st insulation layer 2 are selected. When the carbon compounds such as polyimide resin, etc., as the 2nd insulation layer are used, by different types of the material such as alphaAl2O3, SiO2, etc., as the 1st insulation layer 2 and by selecting the material slower speed than the composite material of the 2nd insulation layer 4 in the etching speed as the composite material of the 1st insulating layer 2, the 1st insulation layer 2 is preserved when the pattern of the 2nd insulation layer 4 is formed, thereby resulting in omitting the formation of the 3rd insulation layer which is executed so far. |
