发明名称 SURFACE TREATMENT APPARATUS
摘要 PURPOSE:To heat only wafers efficiently by a method wherein heaters are provided behind wafer holders and the heaters and the holders are shielded by a shield plate which also serves as a reflective plate. CONSTITUTION:A wafer holder part is formed with jointing members 2 composed of quartz plates 1, stainless steel and the like into an annular shape. Lamp heaters 3 and a shield plate 4 which also serves as a reflective plate are attached behind the wafer holders. The shield plate 4 is composed of a heat resistant metal plate which is bent to have a parabolic cross section and reflects thermic rays from the heaters 3 onto the wafers and at the same time protects the heaters from adhesion of evaporated substances. With such apparatus, as the wafers 5 put on the holder part 1 are heated by the heaters 3 from back of the holder part 1, mingling of harmful decomposed gases and deterioration of the vacuum rate by the evaporated substance due to the irradiation of the thermic rays into a vacuum chamber are eliminated. Moreover, uniform heating at the constant temperature is facilitated.
申请公布号 JPS6024019(A) 申请公布日期 1985.02.06
申请号 JP19840104586 申请日期 1984.05.25
申请人 HITACHI SEISAKUSHO KK 发明人 NAKADA KENSUKE;NITSUTA TAKEHISA
分类号 H01L21/205;H01L21/302;H01L21/3065 主分类号 H01L21/205
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