| 摘要 |
PURPOSE:To obtain a semiconductor device having high gate withstanding voltage by applying a first high melting-point metal-Si alloy first, thermally treating the whole and applying a second high melting-point metal-Si alloy when a gate electrode and a wiring are formed to an Si substrate through a gate oxide film. CONSTITUTION:A thick field oxide film 2 is formed to the peripheral section of a p type Si substrate 1, and a thin gate oxide film 3 is applied on the surface of the substrate 1 surrounded by the oxide film 2. A first gate electrode 4, thickness thereof is 1,000Angstrom or less, the quality of mateials thereof consists of Mo, W, Cr, Va, Ta or which is formed by an alloy of an alloy of these metals and Si, is shaped positioned on the central surface of the film 3, and the whole is thermally treated at approximately 1,000Angstrom for twenty sec in vacuum of 5X10<-7> Torr. A similar second gate electrode 5 in approximately 3,500Angstrom thickness is laminated on the electrode 4, n type impurity ions are implanted while using these electrodes and oxide film as masks, and n<+> type source region 6 and drain region 7 are formed through heat treatment. Accordingly, the electrodes, withstanding voltage thereof is high and adhesive properties thereof with the substrate are excellent, are obtained. |
