| 摘要 |
PURPOSE:To reduce the contact resistance of an ohmic electrode, and to obtain a device having excellent photovoltaic characteristics by applying a transparent conductive film with a latticed opening on an amorphous Si layer having p-i-n junctions in the thickness direction and burying the metallic electrode in the opening when the Si layer is deposited on a conductive substrate and the ohmic electrode is shaped on the beam projecting side of the surface of the Si layer. CONSTITUTION:An amorphous Si layer 32 having p-i-n junctions consisting of a p type layer, an i type layer and an n type layer is deposited on a conductive substrate 21 composed of stainless, etc. from the substrate 21 side. ITO is sputtered on the layer 22 in a mixed gas of Ar and O2 by using a metallic mask, and latticed transparent conductive films 23 are applied. Metallic electrodes 24 consisting of Mo are applied in openings, on which the films 23 are not formed by the mask while edge sections are extended over the upper sections of the films 23 through sputtering in Ar gas. Accordingly, currents from the film 23 sides are collected easily to the electrodes 24, and photovoltaic characteristics are improved largely. |
