发明名称 COMPOUND SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To facilitate an operation of fixing a pellet to a package and reduce the dispersion of thermal resistance by composing a metal structure of the back of the element of a three-layer structure of Au-Ni-Au. CONSTITUTION:After an element of a surface of a gallium arsenide FET is formed, the thickness of the gallium arsenide 4 is adjusted and a gold plating 5 is applied to the back. After a nickel plating 6 is applied, a gold plating 7 is again applied. Thne this pellet is fixed to the package by Au/Sn solder. By the three-layer structure of Au-Ni-Au like this, the pellet is easily fixed to the pellet and the dispersion of the thermal resistance of the element is reduced.
申请公布号 JPS6024026(A) 申请公布日期 1985.02.06
申请号 JP19830132308 申请日期 1983.07.20
申请人 NIPPON DENKI KK 发明人 KANEKO YUKIO
分类号 H01L29/812;H01L21/338;H01L21/52;H01L21/58 主分类号 H01L29/812
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