发明名称 MANUFACTURE OF LEAD FRAME BY VAPOR DEPOSITION OF IONIZATION
摘要 PURPOSE:To obtain the lead frame having no precipitation of alloy layer at the interface of Al/Fe-Ni alloy by a method wherein the vapor of Al or Al alloy ionized by an inactive plasma excited at high frequency is deposited on the surface of a filament of Fe-Ni alloy at a substrate temperature of 150-350 deg.C and a substrate voltage of -2.5--3.0kV. CONSTITUTION:When an Al or Al alloy layer is deposited on the filament of Fe-Ni alloy, the relation between the followings in the case of the substrate temperature of T deg.C and the substrate voltage of -EkV, is prescribed within a range of 100<=TE<=600. That is, a vacuum container 2 having an exhaust port 1 is provided therein with a substrate holder 3, a high frequency electrode 4, a hearth of vapor evaporation source 5, an electron gun 6 positioned close to the hearth, and a heater 7 consisting of an infrared ray lamp positioned behind the hearth. Next, a substrate 8 of Fe-Ni alloy is installed to a holder 3 on the side of the hearth 5, and the Al or Al alloy is contained in the hearth 5, and vapor deposition of ionization is performed in a pressure-reduced Ar gas. At this time, the substrate temperature and the impressed voltage are specified as mentioned above.
申请公布号 JPS6024044(A) 申请公布日期 1985.02.06
申请号 JP19830088231 申请日期 1983.05.19
申请人 HITACHI DENSEN KK 发明人 MIYAKE YASUHIKO;SATOU JIYUNICHI;SANKI SADAHIKO;TAMURA KOUICHI
分类号 C23C14/14;C23C14/16;H01L21/28;H01L21/285;H01L21/48;H01L23/50 主分类号 C23C14/14
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